PlasPac 300 Plasma Clean/Etch System:

RIE System for Wafer Cleaning and Resist Ashing Processes in Volume

Plaspac 200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specifications:

  • 2.5 kW @ RF Frequency (500 W per Electrode)

 


Wafer size

Number of wafers

per cycle time


Throughput

4", 5", 6"

25 wafers

~ 75 wafers / hour*

8"

20 wafers

~ 60 wafers / hour*

8"

20 wafers

~ 40 wafers / hour**

12"

5 wafers

~ 15 wafers / hour*

* for Al pad cleaning

** for stripping of backside photo resist

 

  • Maximum Flexibility: 4”, 5”, 6”, 8”, 12”
  • Process Monitoring and Quality Data Base
  • Flexible Recipe Management
  • Size: 1200 x 1300 x 2200 mm (D x W x H)
  • Weight: 1000 kg
  • Main Power supply: 11,5 kW
  • Vacuum Supply: pumping capacity 410 m3/h (50 Hz), Ultimate pressure 5E-3 mbar
  • Vacuum chamber ID 850 x 850 x 850mm
  • Gas supply: 2-4 mass flow controllers Cooling Unit: Total refrigerating capacity 6 kw